IXFE48N50QD3
Product Overview
- Category: Power MOSFET
- Use: High-power switching applications
- Characteristics: High voltage, high current capability, low on-state resistance
- Package: TO-264
- Essence: Efficient power management
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Voltage Rating: 500V
- Current Rating: 48A
- On-State Resistance: 50mΩ
- Gate Charge: 48nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Pin 1: Source
- Pin 2: Gate
- Pin 3: Drain
Functional Features
- High voltage and current handling capacity
- Low on-state resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Robust design for reliable performance in demanding applications
Advantages
- Suitable for high-power applications
- Low conduction losses
- Enhanced thermal performance
- Reliable and durable construction
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful consideration of heat dissipation in high-power applications
Working Principles
The IXFE48N50QD3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows high current to pass through with minimal resistance, enabling efficient power switching.
Detailed Application Field Plans
This MOSFET is well-suited for various high-power applications, including: - Switch-mode power supplies - Motor drives - Inverters - Welding equipment - Renewable energy systems
Detailed and Complete Alternative Models
- IXFN48N50Q
- IRFP460
- STW48N50
Note: The alternative models listed above are comparable in terms of voltage and current ratings, but users should verify compatibility with their specific application requirements.
This comprehensive entry provides an in-depth understanding of the IXFE48N50QD3 Power MOSFET, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IXFE48N50QD3 בפתרונות טכניים
What is IXFE48N50QD3?
- IXFE48N50QD3 is a high-performance, low-loss 500V/48A MOSFET designed for various power applications.
What are the key features of IXFE48N50QD3?
- The key features include low on-state resistance, fast switching speed, high avalanche energy, and low gate charge.
In what technical solutions can IXFE48N50QD3 be used?
- IXFE48N50QD3 can be used in applications such as power supplies, motor drives, inverters, and welding equipment.
What are the advantages of using IXFE48N50QD3 in power supplies?
- Using IXFE48N50QD3 in power supplies can result in higher efficiency, reduced heat dissipation, and improved overall performance.
How does IXFE48N50QD3 contribute to motor drive applications?
- In motor drive applications, IXFE48N50QD3 enables precise control, lower power losses, and enhanced reliability.
Can IXFE48N50QD3 be used in high-frequency inverter designs?
- Yes, IXFE48N50QD3 is suitable for high-frequency inverter designs due to its fast switching speed and low gate charge.
What thermal management considerations should be taken into account when using IXFE48N50QD3?
- Proper heat sinking and thermal design are crucial to ensure optimal performance and reliability when using IXFE48N50QD3.
Are there any application notes or reference designs available for IXFE48N50QD3?
- Yes, IXYS, the manufacturer of IXFE48N50QD3, provides application notes and reference designs to assist with its implementation in various technical solutions.
What are the typical operating conditions for IXFE48N50QD3?
- The typical operating conditions include a maximum voltage of 500V, a continuous drain current of 48A, and a junction temperature range of -55°C to 150°C.
Where can I find detailed specifications and datasheets for IXFE48N50QD3?
- Detailed specifications and datasheets for IXFE48N50QD3 can be found on the official website of IXYS or through authorized distributors.