IXDI630CI

Product Overview

Category: Integrated Circuit (IC)

Use: IXDI630CI is a high-performance dual low-side gate driver IC designed for driving power MOSFETs and IGBTs in various applications.

Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Compact size - Robust protection features

Package: The IXDI630CI is available in a compact 8-pin DIP (Dual In-line Package) or SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of the IXDI630CI lies in its ability to efficiently drive power MOSFETs and IGBTs, enabling reliable and precise control of high-power devices.

Packaging/Quantity: The IXDI630CI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Supply Voltage: 10V - 20V
• Output Current: 2A
• Input Logic Voltage: 3.3V - 5V
• Operating Temperature Range: -40°C to +125°C
• Propagation Delay: 50ns (typical)
• Rise/Fall Time: 15ns (typical)
• Output Resistance: 1.5Ω (typical)

Detailed Pin Configuration

The IXDI630CI features the following pin configuration:

1. VCC: Supply voltage input
2. IN1: Input control signal 1
3. IN2: Input control signal 2
4. GND: Ground reference
5. OUT1: Output 1 (low-side gate driver)
6. OUT2: Output 2 (low-side gate driver)
7. VS: High-side floating supply voltage
8. COM: Common connection for high-side and low-side outputs

Functional Features

• High voltage capability allows driving of power MOSFETs and IGBTs in high-power applications.
• Fast switching speed enables efficient control of power devices, reducing switching losses.
• Low power consumption ensures energy efficiency and minimizes heat dissipation.
• Robust protection features such as under-voltage lockout (UVLO) and over-temperature protection enhance system reliability.
• Integrated bootstrap diode simplifies the design and reduces component count.

Advantages and Disadvantages

Advantages: - High voltage capability for driving power MOSFETs and IGBTs - Fast switching speed for efficient control - Low power consumption for energy efficiency - Robust protection features for enhanced reliability - Compact size for space-constrained applications

Disadvantages: - Limited output current compared to some other gate driver ICs - Not suitable for high-frequency applications due to propagation delay

Working Principles

The IXDI630CI operates by receiving input control signals (IN1 and IN2) and generating corresponding output signals (OUT1 and OUT2) to drive the low-side gates of power MOSFETs or IGBTs. The high-side floating supply voltage (VS) is used to provide the necessary voltage level for driving the high-side gates. The bootstrap diode, integrated within the IC, simplifies the circuit design by eliminating the need for an external diode.

Detailed Application Field Plans

The IXDI630CI finds extensive application in various fields, including: 1. Motor control systems 2. Switch-mode power supplies 3. Industrial automation 4. Electric vehicle powertrain 5. Renewable energy systems

Detailed and Complete Alternative Models

1. IXDI630SI: Similar to IXDI630CI but with a different package (SOIC)
2. IXDI630PI: Enhanced version with higher output current capability (4A)
3. IXDI630GI: Gate driver IC specifically designed for IGBTs with additional protection features

These alternative models provide flexibility in choosing the most suitable gate driver IC based on specific application requirements.

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