IS61NLP102418-200B3I

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: Low-power, high-speed, non-volatile
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Model: IS61NLP102418-200B3I
• Technology: CMOS (Complementary Metal-Oxide-Semiconductor)
• Memory Type: Non-volatile RAM (Random Access Memory)
• Capacity: 1 Megabit (128K x 8 bits)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: 200 ns (Access Time)

Detailed Pin Configuration

The IS61NLP102418-200B3I has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. NC
22. GND
23. A8
24. A9
25. A10
26. A11
27. A12
28. A13
29. A14
30. A15
31. A16
32. A17
33. A18
34. A19
35. A20
36. A21
37. A22
38. A23
39. A24
40. A25
41. A26
42. A27
43. A28
44. A29
45. A30
46. A31
47. NC
48. VCC

Functional Features

• Non-volatile storage: The IS61NLP102418-200B3I retains data even when power is removed.
• High-speed access: With an access time of 200 ns, it provides fast read and write operations.
• Low-power consumption: Designed for low-power applications, it helps conserve energy.
• Reliable operation: The CMOS technology ensures reliable performance and durability.

Advantages and Disadvantages

Advantages: - Non-volatile memory eliminates the need for constant power supply to retain data. - High-speed access allows for quick data retrieval and storage. - Low-power consumption makes it suitable for battery-powered devices. - Reliable operation ensures data integrity and longevity.

Disadvantages: - Limited capacity compared to other memory devices. - Higher cost per bit compared to volatile memory options. - Requires careful handling due to its sensitive nature.

Working Principles

The IS61NLP102418-200B3I utilizes non-volatile RAM technology, which combines the benefits of both RAM and non-volatile storage. It stores data using a combination of charge trapping and floating gate techniques. When data is written, charges are trapped in the memory cells, allowing them to retain their state even without power. During read operations, the stored charges are sensed and amplified to retrieve the stored data.

Detailed Application Field Plans

The IS61NLP102418-200B3I finds applications in various fields, including: 1. Embedded systems: Used as non-volatile storage in microcontrollers and IoT devices. 2. Automotive electronics: Provides reliable data storage for automotive systems. 3. Industrial automation: Used in control systems and data logging applications. 4. Medical devices: Enables non-volatile storage of critical patient data. 5. Consumer electronics: Used in portable devices, such as smartphones and tablets.

Detailed and Complete Alternative Models

1. IS61NLP102418-200B3LI: Similar to the IS61NLP102418-200B3I, but with extended temperature range (-40°C to +105°C).
2. IS61NLP102418-200B3MI: Higher capacity version with 2 Megabits (256K x 8 bits).
3. IS61NLP102418-200B3HI: High-speed variant with an access time of 100 ns.

These alternative models offer different specifications and features to cater to specific application requirements.

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