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IS43R16160B-5TL-TR

IS43R16160B-5TL-TR

Product Overview

Category

IS43R16160B-5TL-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed performance
  • Low power consumption
  • Compact size
  • Reliable data retention
  • Wide operating temperature range

Package

IS43R16160B-5TL-TR is available in a small form factor package, which makes it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS43R16160B-5TL-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

  • Memory Type: Synchronous DRAM (SDRAM)
  • Capacity: 16 Megabits (2 Megabytes)
  • Organization: 1M x 16 bits
  • Operating Voltage: 3.3V
  • Speed Grade: -5
  • Interface: Parallel
  • Clock Frequency: 166 MHz
  • Access Time: 5 ns
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS43R16160B-5TL-TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. A0
  19. A1
  20. A2
  21. A3
  22. A4
  23. A5
  24. A6
  25. A7
  26. A8
  27. A9
  28. A10
  29. A11
  30. A12
  31. A13
  32. A14
  33. A15
  34. /CAS
  35. /RAS
  36. /WE
  37. /CS
  38. /CKE
  39. /LDQM
  40. /UDQM
  41. /RESET#
  42. VSS

Functional Features

  • Burst mode operation for high-speed data transfer
  • Auto-refresh and self-refresh modes for power-saving
  • On-die termination (ODT) for improved signal integrity
  • Programmable burst length and latency settings
  • Support for multiple banks and row/column addressing

Advantages and Disadvantages

Advantages

  • High-speed performance enables faster data access
  • Low power consumption prolongs battery life in portable devices
  • Compact size allows for integration into small form factor designs
  • Reliable data retention ensures data integrity over time
  • Wide operating temperature range makes it suitable for various environments

Disadvantages

  • Limited capacity compared to higher-density memory options
  • Parallel interface may not be compatible with newer serial interfaces
  • Higher cost per unit compared to lower-capacity memory options

Working Principles

IS43R16160B-5TL-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It uses a clock signal to synchronize data transfers between the memory and the device it is connected to. The memory cells store digital information as charge levels, which are read and written by applying appropriate voltage levels to the address and data lines.

Detailed Application Field Plans

IS43R16160B-5TL-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS43R16160B-5TL-TR include: - IS43R16160D-5TL-TR - IS43R16160E-5TL-TR - IS43R16160F-5TL-TR - IS43R16160G-5TL-TR

These models may differ in capacity, speed grade, or other specifications, but they serve the same purpose of providing synchronous dynamic random-access memory for electronic devices.

In conclusion, IS43R16160B-5TL-TR is a high-performance semiconductor memory product used for data storage and retrieval. Its compact size, low power consumption, and reliable operation make it suitable for a wide range of applications. While it has certain limitations in terms of capacity and interface

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IS43R16160B-5TL-TR בפתרונות טכניים

Sure! Here are 10 common questions and answers related to the application of IS43R16160B-5TL-TR in technical solutions:

  1. Question: What is IS43R16160B-5TL-TR?
    - Answer: IS43R16160B-5TL-TR is a specific model of synchronous DRAM (SDRAM) memory chip.

  2. Question: What is the capacity of IS43R16160B-5TL-TR?
    - Answer: The IS43R16160B-5TL-TR has a capacity of 16 megabits (Mb), which is equivalent to 2 megabytes (MB).

  3. Question: What is the operating voltage range for IS43R16160B-5TL-TR?
    - Answer: The operating voltage range for IS43R16160B-5TL-TR is typically between 2.7V and 3.6V.

  4. Question: What is the clock frequency supported by IS43R16160B-5TL-TR?
    - Answer: IS43R16160B-5TL-TR supports a clock frequency of up to 166 MHz.

  5. Question: What is the data transfer rate of IS43R16160B-5TL-TR?
    - Answer: The data transfer rate of IS43R16160B-5TL-TR is approximately 333 million transfers per second (MT/s).

  6. Question: What is the package type for IS43R16160B-5TL-TR?
    - Answer: IS43R16160B-5TL-TR comes in a small form factor Thin Small Outline Package (TSOP).

  7. Question: Can IS43R16160B-5TL-TR be used in mobile devices?
    - Answer: Yes, IS43R16160B-5TL-TR is suitable for use in mobile devices due to its low power consumption and small package size.

  8. Question: What are the typical applications of IS43R16160B-5TL-TR?
    - Answer: IS43R16160B-5TL-TR is commonly used in various technical solutions such as smartphones, tablets, digital cameras, portable media players, and other embedded systems.

  9. Question: Does IS43R16160B-5TL-TR support burst mode operation?
    - Answer: Yes, IS43R16160B-5TL-TR supports burst mode operation, which allows for faster data transfer rates.

  10. Question: Is IS43R16160B-5TL-TR compatible with other memory chips?
    - Answer: Yes, IS43R16160B-5TL-TR is compatible with other SDRAM memory chips, allowing for easy integration into existing systems.

Please note that the answers provided here are general and may vary depending on specific requirements and configurations. It's always recommended to refer to the datasheet or consult the manufacturer for detailed information.