IS43DR86400C-3DBI-TR

Product Overview

Category

IS43DR86400C-3DBI-TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, tablets, and other digital devices for data storage and retrieval purposes.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size
• Reliable performance

Package

IS43DR86400C-3DBI-TR is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of IS43DR86400C-3DBI-TR lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS43DR86400C-3DBI-TR chips.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 4 Gigabits (512 Megabytes)
• Organization: 8 Meg x 16
• Voltage Supply: 1.7V - 1.95V
• Operating Temperature Range: -40°C to +85°C
• Data Rate: 800 Mbps
• Interface: Parallel
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

IS43DR86400C-3DBI-TR features a ball grid array (BGA) package with a specific pin configuration. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. /RAS
21. /CAS
22. /WE
23. CKE
24. /CS
25. BA0
26. BA1
27. A0
28. A1
29. A2
30. A3
31. A4
32. A5
33. VSS

Functional Features

• High-speed data access: IS43DR86400C-3DBI-TR offers fast data retrieval and storage capabilities, ensuring efficient performance in electronic devices.
• Low power consumption: This product is designed to consume minimal power, extending the battery life of portable devices.
• Reliable performance: IS43DR86400C-3DBI-TR delivers consistent and reliable performance, meeting the demands of various applications.

Advantages and Disadvantages

Advantages

• High-speed data access enhances overall device performance.
• Low power consumption prolongs battery life.
• Compact size allows for easy integration into electronic devices.
• Reliable performance ensures consistent operation.

Disadvantages

• Limited capacity compared to other memory technologies.
• Vulnerable to data loss in case of power failure without proper backup mechanisms.

Working Principles

IS43DR86400C-3DBI-TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data needs to be accessed, the appropriate memory cells are activated, allowing for rapid retrieval and modification of data.

Detailed Application Field Plans

IS43DR86400C-3DBI-TR finds applications in various electronic devices, including but not limited to: - Computers - Smartphones - Tablets - Gaming consoles - Digital cameras - Networking equipment

Detailed and Complete Alternative Models

1. IS43DR86400D-3DBI-TR
2. IS43DR86400E-3DBI-TR
3. IS43DR86400F-3DBI-TR
4. IS43DR86400G-3DBI-TR
5. IS43DR86400H-3DBI-TR

These alternative models offer similar specifications and functionality to IS43DR86400C-3DBI-TR, providing options for different design requirements and availability.

In conclusion, IS43DR86400C-3DBI-TR is a dynamic random-access memory (DRAM) chip that offers high-speed data access, low power consumption, and reliable performance. It finds applications in various electronic devices and has alternative models available for different design needs.