IS42VM16160E-75BLI-TR

Product Overview

Category

IS42VM16160E-75BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42VM16160E-75BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS42VM16160E-75BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 75
• Interface: Parallel
• Clock Frequency: Up to 133 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS42VM16160E-75BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. NC
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /LDQM
46. /UDQM
47. /ZZ
48. VDDQ

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data processing
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps to extend battery life in portable devices
• Compact package size facilitates integration into various electronic devices

Disadvantages

• Limited compatibility with older systems that do not support SDRAM technology
• Relatively higher cost compared to other memory technologies such as NAND flash

Working Principles

IS42VM16160E-75BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. The memory cells store data in the form of electrical charges, which are refreshed periodically to maintain data integrity.

Detailed Application Field Plans

IS42VM16160E-75BLI-TR finds applications in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42VM16160E-75BLI-TR include: - MT48LC16M16A2P-75IT: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 75ns - K4S561632H-UC75: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 75ns - HYB39S16160T-7: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 7ns

These alternative models