IS42S83200B-7TI

Product Overview

Category

IS42S83200B-7TI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide operating temperature range
• Reliable performance

Package

IS42S83200B-7TI is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S83200B-7TI lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S83200B-7TI is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 8 Meg x 32
• Speed: 7 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S83200B-7TI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. A16
31. A17
32. A18
33. A19
34. A20
35. A21
36. BA0#
37. BA1#
38. CLK
39. CKE
40. CS#

Functional Features

• Burst mode operation for efficient data transfer
• Auto precharge and power-down modes for power saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings for flexibility
• Internal pipelined architecture for high-speed operation

Advantages and Disadvantages

Advantages

• High-speed data access
• Low power consumption
• Compact size
• Wide operating temperature range
• Reliable performance

Disadvantages

• Limited capacity compared to other memory technologies
• Higher cost per unit compared to some alternative models

Working Principles

IS42S83200B-7TI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to select the desired memory location.

Detailed Application Field Plans

IS42S83200B-7TI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S83200B-7TI include: - MT48LC32M8A2P-75: Micron Technology - K4S561632H-UC75: Samsung Electronics - HYB39S256160FE-7: Infineon Technologies

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

In conclusion, IS42S83200B-7TI is a high-performance synchronous DRAM chip that offers fast data storage and retrieval capabilities. Its compact size, low power consumption, and wide operating temperature range make it suitable for various electronic devices. While it has limited capacity compared to other memory technologies, its advantages outweigh the disadvantages. With its detailed pin configuration, functional features, and application field plans, IS42S83200B-7TI provides an efficient solution for memory needs in modern electronic devices.