IS42S32800B-7BI

Product Overview

Category

IS42S32800B-7BI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used as a main memory component in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into electronic devices

Package

IS42S32800B-7BI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32800B-7BI lies in its ability to provide efficient and reliable data storage and retrieval functions for electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of IS42S32800B-7BI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 8 bits
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 7 ns
• Interface: Parallel
• Package Type: SO-DIMM
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32800B-7BI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VSS
48. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Support for multiple banks for concurrent operations

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Large storage capacity accommodates complex applications
• Compact size allows for easy integration into various devices
• Power-saving features contribute to energy efficiency

Disadvantages

• Volatile memory requires constant power supply, leading to data loss in case of power failure
• Relatively higher cost compared to other types of memory

Working Principles

IS42S32800B-7BI operates based on the principles of synchronous dynamic random access memory. It stores and retrieves data by utilizing an array of capacitors to represent binary information. The memory cells are organized in a matrix, with each cell storing a single bit of data. Accessing the data involves activating specific rows and columns within the matrix, allowing for read or write operations.

Detailed Application Field Plans

IS42S32800B-7BI finds extensive application in various electronic devices that require high-speed and reliable data storage capabilities. Some of the key application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Gaming Consoles
5. Mobile Phones and Tablets
6. Digital Cameras
7. Networking Equipment

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16M words x 16 bits SDRAM
2. IS45S16400J-7TLA1: 64M words x 16 bits SDRAM
3. IS43TR16256AL-125KBLI: 256M words x 16 bits LPDDR3 SDRAM