IS42S32160F-7TLI

Product Overview

Category

IS42S32160F-7TLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32160F-7TLI is available in a small outline, dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32160F-7TLI lies in its ability to provide fast and reliable data storage and retrieval capabilities in a compact form factor.

Packaging/Quantity

IS42S32160F-7TLI is typically packaged in trays or reels, with each package containing a specific quantity of modules depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 7 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32160F-7TLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. WE#
20. CAS#
21. RAS#
22. CS#
23. BA0
24. BA1
25. A0
26. A1
27. A2
28. A3
29. A4
30. A5
31. A6
32. A7
33. A8
34. A9
35. A10
36. A11
37. A12
38. A13
39. A14
40. A15
41. A16
42. A17
43. A18
44. A19
45. A20
46. A21
47. A22
48. VDD

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Multiplexed address and data bus for reduced pin count

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data access
• Large storage capacity accommodates extensive data requirements
• Low power consumption contributes to energy efficiency
• Compact package size allows for space-saving designs
• Reliable performance ensures data integrity

Disadvantages

• Limited compatibility with certain older systems or devices
• Relatively higher cost compared to other memory technologies
• Sensitivity to electrostatic discharge (ESD) requires proper handling precautions

Working Principles

IS42S32160F-7TLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the system. The memory cells store data in the form of electrical charges, which are refreshed periodically to maintain data integrity.

Detailed Application Field Plans

IS42S32160F-7TLI finds extensive application in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Mobile devices and tablets 5. Automotive electronics 6. Industrial control systems 7. Medical devices 8. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S32160F-7TLI include: 1. MT48LC32M16A2P-75: 512MB SDRAM module with comparable specifications. 2. K4H511638D-UCB3: 512MB SDRAM module with similar characteristics and pin configuration. 3. HYB39S512800T-7: 512MB SDRAM module with equivalent performance and package size.

These alternative models can be considered based on specific requirements and compatibility with the target system or device.

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