התמונה עשויה להיות ייצוג.
ראה מפרטים לפרטי מוצר.
IPG16N10S461AATMA1

IPG16N10S461AATMA1

Product Overview

Category

The IPG16N10S461AATMA1 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits, particularly in power supply and motor control applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPG16N10S461AATMA1 is typically available in a TO-220 package.

Essence

This MOSFET is designed to efficiently handle high power levels while minimizing energy losses.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 16A
  • On-Resistance (RDS(on)): 46mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 26nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPG16N10S461AATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal conduction losses
  • Fast switching speed for improved efficiency
  • High voltage capability for versatile application

Advantages

  • Efficient power handling
  • Suitable for high-frequency switching applications
  • Low power dissipation

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The IPG16N10S461AATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is commonly used in: - Switched-mode power supplies - Motor control circuits - Inverters - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPG16N10S461AATMA1 include: - IRF540N - FDP8870 - STP16NF06L

In conclusion, the IPG16N10S461AATMA1 is a high-performance power MOSFET suitable for a wide range of applications requiring efficient power handling and fast switching characteristics.

[Word count: 330]

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IPG16N10S461AATMA1 בפתרונות טכניים

  1. What is the maximum drain-source voltage of IPG16N10S461AATMA1?

    • The maximum drain-source voltage of IPG16N10S461AATMA1 is 100V.
  2. What is the continuous drain current rating of IPG16N10S461AATMA1?

    • The continuous drain current rating of IPG16N10S461AATMA1 is 16A.
  3. What is the on-state resistance (RDS(on)) of IPG16N10S461AATMA1?

    • The on-state resistance (RDS(on)) of IPG16N10S461AATMA1 is typically 41mΩ at VGS = 10V.
  4. What is the gate threshold voltage of IPG16N10S461AATMA1?

    • The gate threshold voltage of IPG16N10S461AATMA1 is typically 2.5V.
  5. Is IPG16N10S461AATMA1 suitable for use in high-frequency switching applications?

    • Yes, IPG16N10S461AATMA1 is designed for high-frequency switching applications.
  6. What is the operating temperature range of IPG16N10S461AATMA1?

    • The operating temperature range of IPG16N10S461AATMA1 is -55°C to 175°C.
  7. Does IPG16N10S461AATMA1 have built-in protection features?

    • Yes, IPG16N10S461AATMA1 has built-in overcurrent and thermal protection features.
  8. Can IPG16N10S461AATMA1 be used in automotive applications?

    • Yes, IPG16N10S461AATMA1 is suitable for automotive applications.
  9. What package type is IPG16N10S461AATMA1 available in?

    • IPG16N10S461AATMA1 is available in a TO-220AB package.
  10. Are there any application notes or reference designs available for using IPG16N10S461AATMA1 in technical solutions?

    • Yes, Infineon provides application notes and reference designs for using IPG16N10S461AATMA1 in various technical solutions.