IPD096N08N3GBTMA1
Product Overview
Category
The IPD096N08N3GBTMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in applications requiring high power and efficiency, such as in power supplies, motor control, and automotive systems.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Excellent thermal performance
Package
The IPD096N08N3GBTMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually supplied in reels with a standard quantity per reel, typically 250 or 500 units.
Specifications
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 120A
- On-State Resistance (RDS(on)): 4.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 75nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD096N08N3GBTMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low conduction losses
- High current-carrying capability
- Enhanced ruggedness and reliability
- Suitable for high-frequency switching applications
Advantages
- High power efficiency
- Reduced heat dissipation
- Improved system reliability
- Compact design due to lower cooling requirements
Disadvantages
- Higher cost compared to traditional power transistors
- Sensitivity to electrostatic discharge (ESD)
Working Principles
The MOSFET operates based on the principle of field-effect, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.
Detailed Application Field Plans
The IPD096N08N3GBTMA1 is well-suited for use in: - Switched-mode power supplies - Electric vehicle powertrains - Industrial motor drives - Solar inverters - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
Some alternative models to the IPD096N08N3GBTMA1 include: - IRF1405PbF - FDPF33N25T - STP80NF55-06
In conclusion, the IPD096N08N3GBTMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications, despite its higher cost and ESD sensitivity. Its application spans across various industries, and there are alternative models available for consideration.
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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IPD096N08N3GBTMA1 בפתרונות טכניים
What is the maximum drain-source voltage of IPD096N08N3GBTMA1?
- The maximum drain-source voltage of IPD096N08N3GBTMA1 is 80V.
What is the continuous drain current rating of IPD096N08N3GBTMA1?
- The continuous drain current rating of IPD096N08N3GBTMA1 is 120A.
What is the on-state resistance (RDS(on)) of IPD096N08N3GBTMA1?
- The on-state resistance (RDS(on)) of IPD096N08N3GBTMA1 is typically 0.0096 ohms.
What is the gate threshold voltage of IPD096N08N3GBTMA1?
- The gate threshold voltage of IPD096N08N3GBTMA1 is typically 2.5V.
What is the maximum power dissipation of IPD096N08N3GBTMA1?
- The maximum power dissipation of IPD096N08N3GBTMA1 is 625W.
What are the typical applications for IPD096N08N3GBTMA1?
- IPD096N08N3GBTMA1 is commonly used in motor control, battery management systems, and power supplies.
What is the operating temperature range of IPD096N08N3GBTMA1?
- The operating temperature range of IPD096N08N3GBTMA1 is -55°C to 175°C.
Does IPD096N08N3GBTMA1 have built-in protection features?
- Yes, IPD096N08N3GBTMA1 has built-in overcurrent protection and thermal shutdown features.
Is IPD096N08N3GBTMA1 suitable for automotive applications?
- Yes, IPD096N08N3GBTMA1 is designed for use in automotive systems.
What are the recommended mounting and soldering techniques for IPD096N08N3GBTMA1?
- It is recommended to follow the guidelines provided in the datasheet for proper mounting and soldering of IPD096N08N3GBTMA1.