IPB60R190C6ATMA1

Product Overview

Use

It is used as a high-voltage switching device in various electronic applications.

Characteristics

High voltage capability
Low gate charge
Enhanced switching speed
Low on-resistance

Package

The IPB60R190C6ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 600V
Continuous Drain Current (ID): 24A
Power Dissipation (PD): 280W
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 0.19Ω

Detailed Pin Configuration

The IPB60R190C6ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

Fast switching speed
Low gate charge
High input impedance
Low on-resistance

Advantages and Disadvantages

Advantages

Efficient power management
Enhanced switching performance
Suitable for high-voltage applications

Disadvantages

Sensitivity to static discharge
Requires careful handling during assembly

Working Principles

The IPB60R190C6ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source terminals.

Detailed Application Field Plans

The IPB60R190C6ATMA1 is widely used in: - Switching power supplies - Motor control systems - LED lighting - Solar inverters - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB60R190C6ATMA1 include: - IPB60R190CPA - IPB60R190P6 - IPB60R190P7

In conclusion, the IPB60R190C6ATMA1 is a crucial component in high-voltage electronic applications, offering efficient power management and control capabilities.

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