Infineon Technologies
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IPB35N12S3L26ATMA1
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IPB35N12S3L26ATMA1

Product Overview

Category

The IPB35N12S3L26ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The IPB35N12S3L26ATMA1 is typically available in a TO-263 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

The IPB35N12S3L26ATMA1 is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 120V
  • Current Rating: 35A
  • RDS(ON): 0.035Ω
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB35N12S3L26ATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • High voltage and current handling capacity
  • Low on-state resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Enhanced thermal performance for reliability

Advantages

  • Suitable for high-power applications
  • Low conduction losses
  • Reduced heat dissipation requirements
  • Enhanced system efficiency

Disadvantages

  • Higher cost compared to lower power MOSFETs
  • May require more complex drive circuitry

Working Principles

The IPB35N12S3L26ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB35N12S3L26ATMA1 is commonly used in: - Switching power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB35N12S3L26ATMA1 include: - IRF3205 - FDP8878 - STP55NF06L - AUIRF3710

In conclusion, the IPB35N12S3L26ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of high-power electronic applications, despite its higher cost and potential drive circuit complexity.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IPB35N12S3L26ATMA1 בפתרונות טכניים

  1. What is the maximum drain-source voltage of IPB35N12S3L26ATMA1?

    • The maximum drain-source voltage of IPB35N12S3L26ATMA1 is 120V.

  2. What is the continuous drain current rating of IPB35N12S3L26ATMA1?

    • The continuous drain current rating of IPB35N12S3L26ATMA1 is 35A.

  3. What is the on-state resistance (RDS(on)) of IPB35N12S3L26ATMA1?

    • The on-state resistance (RDS(on)) of IPB35N12S3L26ATMA1 is typically 26mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPB35N12S3L26ATMA1?

    • The gate threshold voltage of IPB35N12S3L26ATMA1 is typically 2.5V.

  5. What is the power dissipation of IPB35N12S3L26ATMA1?

    • The power dissipation of IPB35N12S3L26ATMA1 is 200W.

  6. Is IPB35N12S3L26ATMA1 suitable for automotive applications?

    • Yes, IPB35N12S3L26ATMA1 is designed for automotive applications and meets AEC-Q101 standards.

  7. What is the operating temperature range of IPB35N12S3L26ATMA1?

    • The operating temperature range of IPB35N12S3L26ATMA1 is -55°C to 175°C.

  8. Does IPB35N12S3L26ATMA1 have built-in ESD protection?

    • Yes, IPB35N12S3L26ATMA1 features built-in ESD protection.

  9. What package type does IPB35N12S3L26ATMA1 come in?

    • IPB35N12S3L26ATMA1 is available in a TO-263-7 package.

  10. Can IPB35N12S3L26ATMA1 be used in high-frequency switching applications?

    • Yes, IPB35N12S3L26ATMA1 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.