Infineon Technologies
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IPB100N04S204ATMA1
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IPB100N04S204ATMA1

Product Overview

Category

The IPB100N04S204ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic applications, including power supplies, motor control, and automotive systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance

Package

The IPB100N04S204ATMA1 is available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 100A
  • RDS(ON) Max: 4mΩ
  • Power Dissipation (PD): 250W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB100N04S204ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability
  • RoHS compliant

Advantages and Disadvantages

Advantages

  • High current-carrying capability
  • Low conduction losses
  • Suitable for high-frequency applications
  • Enhanced ruggedness and reliability

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The IPB100N04S204ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB100N04S204ATMA1 is widely used in: - Switched-mode power supplies - Electric vehicle powertrains - Industrial motor drives - Solar inverters - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

Some alternative models to the IPB100N04S204ATMA1 include: - IPB100N04S2-03 - IPB100N04S4-03 - IPB100N04S2L-03 - IPB100N04S4L-03

In conclusion, the IPB100N04S204ATMA1 is a high-performance power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of electronic applications.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IPB100N04S204ATMA1 בפתרונות טכניים

  1. What is the maximum drain-source voltage of IPB100N04S204ATMA1?

    • The maximum drain-source voltage of IPB100N04S204ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB100N04S204ATMA1?

    • The continuous drain current rating of IPB100N04S204ATMA1 is 100A.

  3. What is the on-resistance of IPB100N04S204ATMA1?

    • The on-resistance of IPB100N04S204ATMA1 is typically 4mΩ at Vgs = 10V.

  4. What is the gate threshold voltage of IPB100N04S204ATMA1?

    • The gate threshold voltage of IPB100N04S204ATMA1 is typically 2V.

  5. What is the power dissipation of IPB100N04S204ATMA1?

    • The power dissipation of IPB100N04S204ATMA1 is 375W.

  6. What are the typical applications for IPB100N04S204ATMA1?

    • IPB100N04S204ATMA1 is commonly used in motor control, battery protection, and power management applications.

  7. What is the operating temperature range of IPB100N04S204ATMA1?

    • The operating temperature range of IPB100N04S204ATMA1 is -55°C to 175°C.

  8. Does IPB100N04S204ATMA1 have built-in ESD protection?

    • Yes, IPB100N04S204ATMA1 has built-in ESD protection.

  9. What is the package type of IPB100N04S204ATMA1?

    • IPB100N04S204ATMA1 comes in a TO-263-7 package.

  10. Is IPB100N04S204ATMA1 RoHS compliant?

    • Yes, IPB100N04S204ATMA1 is RoHS compliant.