Encyclopedia Entry: 71V416L10PHGI8

Product Overview

Category

The 71V416L10PHGI8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V416L10PHGI8 is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V416L10PHGI8 is typically packaged individually and is available in varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit x 16-bit
• Supply Voltage: 3.3V
• Access Time: 10 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The 71V416L10PHGI8 has a total of 48 pins, each serving a specific function. The detailed pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. GND
27. WE#
28. OE#
29. CE1#
30. CE2#
31. CE3#
32. BYTE#
33. UB#
34. LB#
35. A16
36. A17
37. A18
38. A19
39. A20
40. A21
41. A22
42. A23
43. A24
44. A25
45. A26
46. A27
47. A28
48. VCC

Functional Features

• High-speed data access and retrieval
• Non-volatile storage capability
• Low power consumption during standby mode
• Easy integration into various electronic systems
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast operation speed enables efficient data processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption contributes to energy efficiency
• Reliable performance ensures data integrity
• Compact package allows for easy integration

Disadvantages

• Limited storage capacity compared to other memory technologies
• Volatile memory requires continuous power supply to retain data

Working Principles

The 71V416L10PHGI8 operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The 71V416L10PHGI8 finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• 71V416L12PHGI8
• 71V416L15PHGI8
• 71V416L20PHGI8
• 71V416L25PHGI8
• 71V416L30PHGI8

These alternative models offer similar functionality and characteristics, with varying storage capacities to suit different application requirements.

In conclusion, the 71V416L10PHGI8 is a high-speed, reliable semiconductor memory device primarily used for data storage and retrieval in electronic systems. Its compact package, low power consumption, and large storage capacity make it suitable for various applications across different industries.