CY62126ESL-45ZSXIT

Product Overview

Category

CY62126ESL-45ZSXIT belongs to the category of static random access memory (SRAM) integrated circuits.

Use

This product is primarily used for storing and retrieving digital information in electronic devices. It provides high-speed read and write operations, making it suitable for applications that require fast data access.

Characteristics

• High-speed operation: The CY62126ESL-45ZSXIT offers fast access times, allowing for efficient data processing.
• Low power consumption: This SRAM IC is designed to minimize power consumption, making it suitable for battery-powered devices.
• Small form factor: The compact package size of the CY62126ESL-45ZSXIT enables its integration into space-constrained electronic systems.
• Wide temperature range: The product operates reliably across a wide temperature range, ensuring its suitability for various environments.

Package and Quantity

The CY62126ESL-45ZSXIT is available in a surface-mount 44-pin TSOP (Thin Small Outline Package). Each package contains one unit of the SRAM IC.

Specifications

• Memory capacity: 1 Megabit (128K x 8 bits)
• Operating voltage: 2.7V - 3.6V
• Access time: 45 nanoseconds
• Standby current: 10 microamps (typical)
• Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

The CY62126ESL-45ZSXIT features a 44-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. GND
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

The CY62126ESL-45ZSXIT offers the following functional features:

• Random access: The SRAM allows for direct access to any memory location, enabling efficient data retrieval.
• High-speed operation: With an access time of 45 nanoseconds, this IC ensures fast read and write operations.
• Low power consumption: The product is designed to minimize power usage, making it suitable for battery-powered devices.
• Non-volatile storage: The SRAM retains stored data even when power is disconnected, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data processing.
• Low power consumption prolongs battery life in portable devices.
• Compact form factor allows for easy integration into space-constrained systems.
• Wide temperature range ensures reliable operation in various environments.

Disadvantages

• Limited memory capacity compared to other storage technologies.
• Volatile nature requires constant power supply to retain data.

Working Principles

The CY62126ESL-45ZSXIT operates based on the principles of static random access memory. It utilizes flip-flops to store each bit of data in a stable state. The stored data can be accessed and modified through the appropriate control signals.

Detailed Application Field Plans

The CY62126ESL-45ZSXIT is commonly used in various electronic devices and systems, including but not limited to:

1. Embedded systems: The SRAM IC is widely employed in microcontrollers and other embedded systems for fast data storage and retrieval.
2. Networking equipment: It finds applications in routers, switches, and network interface cards, where high-speed memory is crucial for efficient data processing.
3. Consumer electronics: The product is utilized in digital cameras, printers, and gaming consoles, enhancing their performance by providing quick access to temporary data.

Detailed and Complete Alternative Models

Several alternative models with similar specifications and features are available in the market. Some notable alternatives to the CY62126ESL-45ZSXIT include:

1. CY62128ELL-45ZXI
2. IS61LV25616AL-10TLI
3. AS6C1008-55SIN

These alternatives offer comparable memory capacity, access times, and power consumption characteristics, providing flexibility in choosing the most