Cree/Wolfspeed
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CGHV27200F
צפה בפרטים DataSheets

CGHV27200F

Product Overview

Category

The CGHV27200F belongs to the category of high-power, high-frequency gallium nitride (GaN) transistors.

Use

It is used in high-frequency power amplifiers and other applications requiring high power and efficiency.

Characteristics

  • High power handling capability
  • High operating frequency
  • High efficiency
  • Low thermal resistance

Package

The CGHV27200F comes in a compact and robust package suitable for high-power applications.

Essence

The essence of CGHV27200F lies in its ability to deliver high power output with exceptional efficiency and reliability.

Packaging/Quantity

The CGHV27200F is typically packaged individually and is available in various quantities depending on the supplier.

Specifications

  • Frequency Range: 0.1 - 6 GHz
  • Output Power: 200 W
  • Efficiency: >60%
  • Voltage Rating: 28 V
  • Current Rating: 16 A
  • Thermal Resistance: <0.3 °C/W

Detailed Pin Configuration

The CGHV27200F features a detailed pin configuration that includes input, output, gate, and bias connections, ensuring proper integration into high-power amplifier circuits.

Functional Features

  • High power density
  • Broadband performance
  • High linearity
  • Excellent thermal management

Advantages

  • High power handling capability
  • Wide frequency range coverage
  • Enhanced thermal performance
  • Compact form factor

Disadvantages

  • Higher cost compared to traditional silicon-based transistors
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The CGHV27200F operates based on the principles of GaN technology, utilizing its high electron mobility and wide bandgap to achieve high-frequency, high-power operation with improved efficiency.

Detailed Application Field Plans

The CGHV27200F is ideally suited for use in: - Radar systems - Wireless communication infrastructure - Satellite communication systems - Test and measurement equipment - Industrial heating and plasma systems

Detailed and Complete Alternative Models

  • CGHV27030S
  • CGHV40180F
  • CGHV14800F

In conclusion, the CGHV27200F offers high-performance characteristics suitable for demanding high-power, high-frequency applications. Its advanced GaN technology provides superior efficiency and power handling capabilities, making it an ideal choice for various communication and industrial applications.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של CGHV27200F בפתרונות טכניים

  1. What is the CGHV27200F?

    • The CGHV27200F is a high-power, high-frequency gallium nitride (GaN) transistor designed for use in RF and microwave applications.

  2. What are the key features of the CGHV27200F?

    • The CGHV27200F features high power density, high efficiency, and wide bandwidth, making it suitable for various technical solutions requiring high-performance RF transistors.

  3. What are the typical applications of the CGHV27200F?

    • The CGHV27200F is commonly used in radar systems, communication equipment, electronic warfare systems, and other high-frequency RF applications.

  4. What is the operating frequency range of the CGHV27200F?

    • The CGHV27200F operates in the frequency range of 0.03 GHz to 3.0 GHz, making it suitable for a wide range of RF and microwave applications.

  5. What is the maximum output power of the CGHV27200F?

    • The CGHV27200F can deliver up to 200 watts of output power, making it ideal for high-power RF amplification requirements.

  6. What are the thermal considerations for using the CGHV27200F in technical solutions?

    • Proper thermal management is essential when using the CGHV27200F to ensure optimal performance and reliability. Adequate heat sinking and thermal dissipation measures should be implemented.

  7. Does the CGHV27200F require any special matching or tuning for its operation?

    • Yes, the CGHV27200F may require impedance matching and tuning to maximize its performance and efficiency in specific technical solutions.

  8. Can the CGHV27200F be used in pulsed applications?

    • Yes, the CGHV27200F is suitable for pulsed RF applications, offering high power and fast switching capabilities.

  9. What are the voltage and current requirements for operating the CGHV27200F?

    • The CGHV27200F typically operates at voltages around 50V and requires appropriate biasing and supply current based on the specific application requirements.

  10. Are there any recommended application circuits or reference designs for utilizing the CGHV27200F?

    • Yes, several application notes and reference designs are available from the manufacturer to assist in the proper implementation of the CGHV27200F in technical solutions. These resources can provide valuable guidance for circuit design and optimization.