ATF-58143-TR1G
Product Overview
Category
ATF-58143-TR1G belongs to the category of high-frequency, low-noise enhancement mode Pseudomorphic HEMT (pHEMT) transistors.
Use
This product is commonly used in applications requiring high-frequency amplification and low noise performance, such as in wireless communication systems, radar systems, and satellite communication equipment.
Characteristics
- High-frequency operation
- Low noise figure
- High gain
- Small package size
Package
The ATF-58143-TR1G is typically available in a surface-mount SOT-343 package.
Essence
The essence of ATF-58143-TR1G lies in its ability to provide high-frequency amplification with minimal added noise, making it suitable for demanding communication and radar applications.
Packaging/Quantity
The ATF-58143-TR1G is usually supplied in reels containing a specific quantity, typically 3000 units per reel.
Specifications
- Frequency Range: 100 MHz to 40 GHz
- Noise Figure: 0.3 dB at 10 GHz
- Power Gain: 14 dB at 10 GHz
- Input Voltage: 0.5V
- Output Voltage: 2.5V
- Operating Temperature Range: -40°C to 85°C
Detailed Pin Configuration
The ATF-58143-TR1G features a 4-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. Ground (GND)
Functional Features
- High-frequency signal amplification
- Low noise figure
- High gain
- Wide operating frequency range
- Suitable for high-frequency communication and radar systems
Advantages and Disadvantages
Advantages
- Excellent high-frequency performance
- Low noise figure
- Compact package size
- Wide operating temperature range
Disadvantages
- Higher cost compared to standard transistors
- Sensitive to electrostatic discharge (ESD)
Working Principles
The ATF-58143-TR1G operates based on the principles of Pseudomorphic High Electron Mobility Transistor (pHEMT) technology, which allows for high-frequency amplification with minimal added noise. When biased and connected in a suitable circuit, the transistor amplifies incoming high-frequency signals while maintaining a low noise figure.
Detailed Application Field Plans
The ATF-58143-TR1G is well-suited for the following application fields: - Wireless communication systems - Radar systems - Satellite communication equipment - Microwave point-to-point links - Test and measurement equipment
Detailed and Complete Alternative Models
Some alternative models to ATF-58143-TR1G include: - MGA-86576 from Avago Technologies - TGF2023-02 from Qorvo - CGY2171UH/C1 from Infineon Technologies
In conclusion, ATF-58143-TR1G is a high-frequency, low-noise pHEMT transistor that offers excellent performance in various communication and radar applications, despite its higher cost and sensitivity to ESD.
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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של ATF-58143-TR1G בפתרונות טכניים
What is ATF-58143-TR1G?
- ATF-58143-TR1G is a low noise enhancement mode Pseudomorphic HEMT in a surface mount plastic package.
What are the typical applications of ATF-58143-TR1G?
- Typical applications include cellular infrastructure, satellite communication, and other high-performance RF systems.
What is the operating frequency range of ATF-58143-TR1G?
- The operating frequency range is from DC to 18 GHz.
What is the typical gain of ATF-58143-TR1G?
- The typical gain is 13 dB at 6 GHz.
What is the noise figure of ATF-58143-TR1G?
- The noise figure is typically 0.6 dB at 6 GHz.
What is the recommended bias voltage for ATF-58143-TR1G?
- The recommended bias voltage is 3 V.
What are the key features of ATF-58143-TR1G?
- Key features include high linearity, low noise, and high gain performance.
What are the thermal characteristics of ATF-58143-TR1G?
- The thermal resistance junction-to-case is 50°C/W.
What are the packaging options available for ATF-58143-TR1G?
- ATF-58143-TR1G is available in a plastic SOT-343 package.
Are there any application notes or reference designs available for ATF-58143-TR1G?
- Yes, application notes and reference designs are available from the manufacturer's website to assist with integrating ATF-58143-TR1G into technical solutions.