BD249B-S

Product Overview

Category: Electronic Component
Use: Power Amplifier Transistor
Characteristics: High power dissipation, low collector-emitter saturation voltage
Package: TO-220
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

• Collector-Emitter Voltage: 100V
• Collector Current: 25A
• Total Power Dissipation: 65W
• Transition Frequency: 3MHz
• Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High current capability
• Low saturation voltage
• Complementary PNP type available (BD250B-S)

Advantages and Disadvantages

Advantages: - High power dissipation - Low collector-emitter saturation voltage - Complementary PNP type available

Disadvantages: - Limited operating temperature range (-65°C to 150°C)

Working Principles

The BD249B-S is designed to amplify and switch electronic signals. It operates as a current-controlled switch, allowing it to regulate the flow of power within a circuit.

Detailed Application Field Plans

The BD249B-S is commonly used in audio amplifiers, power supplies, and industrial control systems due to its high power dissipation and low saturation voltage.

Detailed and Complete Alternative Models

• BD250B-S (Complementary PNP type)
• BD245B-S (Lower collector current)
• BD246B-S (Higher collector current)

This comprehensive entry provides detailed information about the BD249B-S, covering its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.