BLF881S,112 Encyclopedia Entry

Product Overview

The BLF881S,112 is a high-power LDMOS transistor designed for use in RF power amplifiers. This transistor belongs to the category of electronic components and is commonly used in applications requiring high-frequency signal amplification. The BLF881S,112 is characterized by its high power output, efficiency, and reliability. It is typically packaged in a compact form factor and is essential for amplifying RF signals in various communication systems.

Basic Information

• Category: Electronic Components
• Use: RF Power Amplification
• Characteristics: High Power Output, Efficiency, Reliability
• Package: Compact Form Factor
• Essence: High-Frequency Signal Amplification
• Packaging/Quantity: Typically Packaged Individually

Specifications

• Frequency Range: 470 - 860 MHz
• Output Power: 125 W
• Efficiency: >30%
• Voltage: 32 V
• Current: 15 A

Detailed Pin Configuration

The BLF881S,112 features a detailed pin configuration that includes input, output, and bias connections. The specific pinout details can be found in the product datasheet provided by the manufacturer.

Functional Features

• High-Power Amplification: Capable of amplifying RF signals with high output power.
• Efficiency: Provides efficient signal amplification, minimizing power loss.
• Reliability: Offers reliable performance in demanding RF amplifier applications.

Advantages and Disadvantages

Advantages

• High Power Output
• Efficient Signal Amplification
• Compact Form Factor

Disadvantages

• Higher Cost Compared to Lower Power Transistors
• Requires Adequate Heat Dissipation Measures

Working Principles

The BLF881S,112 operates based on the principles of LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which enables high-power RF amplification with improved efficiency and linearity. By utilizing advanced semiconductor materials and design techniques, it achieves high-performance amplification while maintaining reliability.

Detailed Application Field Plans

The BLF881S,112 is widely used in the following application fields: - Broadcast Transmitters - Cellular Base Stations - Radar Systems - RF Communication Equipment

Detailed and Complete Alternative Models

• BLF888A
• BLF884P
• BLF861A

In conclusion, the BLF881S,112 LDMOS transistor offers high-power RF amplification with efficiency and reliability, making it an essential component in various communication and broadcast systems.

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