BLF6G22-180RN,112

Product Overview

Use

It is used in high-frequency applications such as radio frequency amplifiers and transmitters.

Characteristics

High power handling capability
Broadband performance
High efficiency

Package

The BLF6G22-180RN,112 is typically available in a compact and durable package suitable for surface mount technology (SMT) assembly.

Essence

This product is essential for achieving high-power amplification in RF communication systems.

Packaging/Quantity

The BLF6G22-180RN,112 is usually packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

Frequency Range: 0.1 - 3.5 GHz
Output Power: 180 W
Gain: 16 dB
Efficiency: >60%
Operating Voltage: 28 V
Package Type: SOT539A

Detailed Pin Configuration

The BLF6G22-180RN,112 features a detailed pin configuration with specific connections for gate, drain, and source terminals, ensuring proper integration into RF circuit designs.

Functional Features

High power output
Wide frequency coverage
High linearity
Robust construction for reliable performance

Advantages and Disadvantages

Advantages

High power handling capability
Wide frequency range coverage
High efficiency
Compact package size

Disadvantages

Limited availability in certain regions
Higher cost compared to lower power alternatives

Working Principles

The BLF6G22-180RN,112 operates based on the principles of RF power amplification, utilizing advanced semiconductor technology to deliver high power output with minimal distortion.

Detailed Application Field Plans

The BLF6G22-180RN,112 is ideally suited for use in: - Base station amplifiers - Broadcast transmitters - Radar systems - Industrial heating applications

Detailed and Complete Alternative Models

BLF6G20-180RN,112
BLF6G25-180RN,112
BLF6G30-180RN,112

These alternative models offer similar performance characteristics and can be considered as substitutes based on specific application requirements.

In conclusion, the BLF6G22-180RN,112 is a high-performance RF power transistor designed for demanding applications that require high power amplification across a wide frequency range. Its robust construction, efficient operation, and broad application suitability make it a valuable component in modern RF communication and industrial systems.

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