BLF25M612G,118

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SOT539A - Essence: Gallium Nitride (GaN) Technology - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 2400-2500 MHz - Output Power: 25W - Gain: 12dB - Efficiency: 55% - Voltage: 32V - Current: 1.5A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected

Functional Features: - High Power Amplification - Broadband Operation - High Efficiency - High Gain

Advantages: - Compact Size - High Power Output - Wide Frequency Range - Suitable for Broadband Applications

Disadvantages: - Higher Cost Compared to Traditional Transistors - Sensitive to Voltage Spikes

Working Principles: The BLF25M612G,118 operates based on the principles of GaN technology, where the high electron mobility and wide bandgap properties of GaN are utilized to achieve high power amplification at microwave frequencies.

Detailed Application Field Plans: - Wireless Communication Systems - Radar Systems - Satellite Communication - Microwave Links

Detailed and Complete Alternative Models: - BLF2425M7L250P - BLF578XR - MRF13750H

This RF power transistor, BLF25M612G,118, is a high-performance electronic component designed for amplifying radio frequency signals in various applications. With its compact size, high power output, and wide frequency range, it offers significant advantages for broadband communication systems and radar applications. However, its higher cost and sensitivity to voltage spikes should be considered when selecting this component for a specific application.

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