AS4C32M8D1-5TINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Compact package size
• Package: TQFP (Thin Quad Flat Package)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Part Number: AS4C32M8D1-5TINTR
• Organization: 32M words x 8 bits x 1 bank
• Voltage Supply: 3.3V ±0.3V
• Operating Temperature Range: -40°C to +85°C
• Speed Grade: 5 (200 MHz)
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Synchronous DRAM (SDRAM)
• Pin Count: 48 pins

Detailed Pin Configuration

The AS4C32M8D1-5TINTR IC has the following pin configuration:

| Pin No. | Pin Name | Description | |---------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3 | DQ0 | Data input/output bit 0 | | 4 | DQ1 | Data input/output bit 1 | | ... | ... | ... | | 46 | DQ31 | Data input/output bit 31 | | 47 | WE | Write enable | | 48 | CAS | Column address strobe |

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low power consumption helps in reducing energy usage.
• Compact package size enables space-saving designs.
• Auto-refresh and self-refresh modes ensure data integrity during power fluctuations.
• Synchronous DRAM interface facilitates efficient communication with the memory module.

Advantages

• Fast data access and transfer speeds enhance system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package size enables integration into small form factor designs.
• Auto-refresh and self-refresh modes ensure data reliability.
• Synchronous DRAM interface provides compatibility with various systems.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit of storage compared to alternative memory options.
• Vulnerable to data loss in case of power failure without proper backup mechanisms.

Working Principles

The AS4C32M8D1-5TINTR is a dynamic random access memory (DRAM) module that stores data in capacitors within its memory cells. These capacitors need to be periodically refreshed to maintain data integrity. The memory module communicates with the system through a synchronous DRAM interface, allowing for synchronized data transfers between the memory and the processor.

Detailed Application Field Plans

The AS4C32M8D1-5TINTR memory module finds applications in various electronic devices, including: - Personal computers - Laptops and notebooks - Servers and workstations - Networking equipment - Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

Some alternative models to the AS4C32M8D1-5TINTR memory module include: - AS4C32M16D1-5TINTR: Similar specifications but with double the data width (16 bits instead of 8 bits). - AS4C64M8D1-5TINTR: Double the storage capacity (64M words) with the same data width (8 bits). - AS4C64M16D1-5TINTR: Double the storage capacity (64M words) with double the data width (16 bits).

(Note: The above alternative models are for illustrative purposes and may not represent the complete range of alternatives available in the market.)

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