S-93C86BD4I-T8T1G

Product Overview

Category

S-93C86BD4I-T8T1G belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, automotive systems, consumer electronics, and industrial equipment.

Characteristics

• Non-volatile memory: The data stored in S-93C86BD4I-T8T1G remains intact even when power is removed.
• High endurance: This chip can withstand a large number of read/write cycles, ensuring long-term reliability.
• Low power consumption: S-93C86BD4I-T8T1G operates efficiently, consuming minimal power during read and write operations.
• Small form factor: The compact size of this chip allows for easy integration into space-constrained designs.

Package

S-93C86BD4I-T8T1G is available in a small surface-mount package, making it suitable for automated assembly processes. The package type is TSSOP-8.

Essence

The essence of S-93C86BD4I-T8T1G lies in its ability to store and retrieve digital information reliably, even in the absence of power.

Packaging/Quantity

This product is typically supplied in reels or tubes, with each reel containing 2,500 units.

Specifications

• Memory capacity: 8,192 bits (1,024 bytes)
• Interface: Serial I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write cycle time: 5ms (maximum)
• Data retention: 100 years (minimum)

Detailed Pin Configuration

S-93C86BD4I-T8T1G features an 8-pin TSSOP package with the following pin configuration:

1. VCC: Power supply voltage
2. SDA: Serial data input/output
3. SCL: Serial clock input
4. WP: Write protect (optional)
5. GND: Ground
6. NC: No connection
7. NC: No connection
8. VSS: Ground

Functional Features

• Byte-level Read/Write: Allows individual bytes of data to be read from or written to the chip.
• Sequential Read: Supports sequential reading of multiple bytes, enabling efficient data retrieval.
• Write Protection: The optional write protect pin (WP) can be used to prevent accidental modification of stored data.
• Software Write Protection: Provides software-controlled protection against unauthorized writes.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data integrity even during power loss.
• High endurance allows for frequent read/write operations without compromising reliability.
• Low power consumption prolongs battery life in portable devices.
• Small form factor facilitates integration into compact designs.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write cycle time may impact performance in time-sensitive applications.

Working Principles

S-93C86BD4I-T8T1G utilizes EEPROM technology, which employs floating-gate transistors to store and retrieve digital information. When data is written, electrical charges are trapped within the floating gates, representing the desired binary values. During read operations, these charges are sensed to determine the stored data.

Detailed Application Field Plans

S-93C86BD4I-T8T1G finds application in various fields, including: 1. Automotive: Used for storing vehicle configuration data, mileage records, and security-related information. 2. Industrial Control Systems: Enables parameter storage, calibration data retention, and firmware updates in industrial equipment. 3. Consumer Electronics: Utilized for storing user preferences, device settings, and firmware updates in smartphones, tablets, and gaming consoles. 4. Medical Devices: Used for storing patient data, device configurations, and event logs in medical equipment.

Detailed and Complete Alternative Models

1. S-93C66BD4I-T8T1G: Similar to S-93C86BD4I-T8T1G but with a smaller memory capacity of 4,096 bits (512 bytes).
2. S-93C106BD4I-T8T1G: Offers a larger memory capacity of 16,384 bits (2,048 bytes) compared to S-93C86BD4I-T8T1G.

These alternative models provide options with varying memory capacities to suit different application requirements.

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